SSM6K202FE(2007) Hoja de datos - Toshiba
Número de pieza
SSM6K202FE
Fabricante

Toshiba
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.8 V drive
• Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V)
Ron = 101 mΩ (max) (@VGS = 2.5V)
Ron = 85 mΩ (max) (@VGS = 4.0V)
Número de pieza
componentes Descripción
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Fabricante
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba