SSM3K36TU Hoja de datos - Toshiba
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Toshiba
○ High-Speed Switching Applications
• 1.5-V drive
• Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V)
: Ron = 0.85 Ω (max) (@VGS = 2.5 V)
: Ron = 0.66 Ω (max) (@VGS = 4.5 V)
: Ron = 0.63 Ω (max) (@VGS = 5.0 V)
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba