SSM3J112TU Hoja de datos - Toshiba
Número de pieza
SSM3J112TU
Fabricante
Toshiba
High Speed Switching Applications
• 4V drive
• Low on-resistance: Ron = 790mΩ (max) (@VGS = −4 V)
Ron = 390mΩ (max) (@VGS = −10 V)
Número de pieza
componentes Descripción
Ver
Fabricante
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
