DESCRIPTION
The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.

GENERAL FEATURES
● N-Channel
   VDS = 30V,ID = 6.9A
   RDS(ON) < 42mΩ @ VGS=4.5V
   RDS(ON) < 28mΩ @ VGS=10V
● P-Channel
   VDS = -30V,ID = -6A
   RDS(ON) < 58mΩ @ VGS=-4.5V
   RDS(ON) < 35mΩ @ VGS=-10V

● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package