SSF2637E Hoja de datos - Silikron Semiconductor Co.,LTD.
Fabricante

Silikron Semiconductor Co.,LTD.
DESCRIPTION
The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V.
GENERAL FEATURES
● VDS = -20V,ID =-5.4A
RDS(ON) < 52mΩ @ VGS=-2.5V
RDS(ON) < 43mΩ @ VGS=-4.5V
ESD Rating: 3000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
APPLICATION
● Battery protection
● Load switch
● Power management
Número de pieza
componentes Descripción
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Fabricante
High power and current handing capability
Unspecified
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.