SPS02N60C3 Hoja de datos - VBsemi Electronics Co.,Ltd
Número de pieza
SPS02N60C3
Fabricante

VBsemi Electronics Co.,Ltd
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC
Número de pieza
componentes Descripción
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Fabricante
N-Channel 650V Power MOSFET (D-S)
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650V (D-S) Power MOSFET
VBsemi Electronics Co.,Ltd