SPB11N60C2 Hoja de datos - Infineon Technologies
Número de pieza
SPB11N60C2
Fabricante

Infineon Technologies
Feature
1. New revolutionary high voltage technology
2. Ultra low gate charge
3. Periodic avalanche rated
4. Extreme dv/dt rated
5. Ultra low effective capacitances

Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor ( Rev : 2008 )
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2009 )
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2010 )
Infineon Technologies