SM746 Hoja de datos - Polyfet RF Devices
Fabricante

Polyfet RF Devices
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
175.0 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
Número de pieza
componentes Descripción
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Fabricante
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices