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SKP02N120(2013) Hoja de datos - Infineon Technologies

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SKP02N120

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13 Pages

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Infineon
Infineon Technologies 

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode

Allowed number of short circuits: <1000; time between short circuits: >1s.
 • 40lower Eoff compared to previous generation
 • Short circuit withstand time – 10 s
 • Designed for:
    - Motor controls
    - Inverter
    - SMPS
 • NPT-Technology offers:
    - very tight parameter distribution
    - high ruggedness, temperature stable behaviour
    - parallel switching capability
 • Qualified according to JEDEC1 for target applications
 • Pb-free lead plating; RoHS compliant
 • Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
PDF
Infineon Technologies

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