General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• 4.2 A, 30 V. RDS(ON) = 65 mΩ @ VGS = 10 V
                      RDS(ON) = 95 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
   low RDS(ON)
• Low gate charge (9.4 nC typical)
• High power and current handling capability