General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V
                          RDS(ON) = 43 mΩ @ VGS = –2.5 V
                          RDS(ON) = 60 mΩ @ VGS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• Battery management
• Load switch
• Battery protection