FEATURES
• TrenchFET® Power MOSFET: 1.8 V Rated
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7 Ω
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Material categorization: For definitions of compliance
   please see www.vishay.com/doc?99912

APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
   Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers

BenefitS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation