Product Description
Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Product Features
• Patented GaAs Heterostructure FET Technology
• +34 dBm Output Power at 1 dB Compression
• +45 dBm Output IP3
• High Drain Efficiency: Up to 50% at Class AB
• 15 dB Gain at 900 MHz (Application circuit)
• 11 dB Gain at 1900 MHz (Application circuit)

APPLICATIONs
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers