General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications

FEATUREs
• High input impedance
• High peak current capability (150A)
• Easy gate drive
• Surface Mount : SGR20N40L
• Straight Lead : SGU20N40L

APPLICATION
Strobe flash.