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SBA-4089 Hoja de datos - Sirenza Microdevices => RFMD

SBA-4089 image

Número de pieza
SBA-4089

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5 Pages

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308.3 kB

Fabricante
Sirenza
Sirenza Microdevices => RFMD 

Product Description
Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Product Features
• Now available in Lead Free, RoHS Compliant, & Green Packaging
• IP3 = 33.5dBm @ 1950MHz
• Pout=13.3 dBm @-45dBc ACP IS-95 1950MHz
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design


APPLICATIONs
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals

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Fabricante
DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Unspecified
DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Sirenza Microdevices => RFMD
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Sirenza Microdevices => RFMD
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Stanford Microdevices
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier ( Rev : RevC )
PDF
Sirenza Microdevices => RFMD
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Stanford Microdevices
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
PDF
Sirenza Microdevices => RFMD
DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier
PDF
Stanford Microdevices
Cascadable InGap/GaAS HBT MMIC Amplifier
PDF
Stanford Microdevices
Cascadable InGap/GaAS HBT MMIC Amplifier
PDF
Stanford Microdevices

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