Número de pieza
SB039C040-1-W-AG
componentes Descripción
Other PDF
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PDF
page
1 Pages
File Size
151.6 kB
Fabricante
Transys Electronics Limited
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SB039C040-1-W-AG Hoja de datos - Transys Electronics Limited
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Número de pieza
componentes Descripción
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Fabricante
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 0.5 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 105 Volt, 1 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp
Transys Electronics Limited
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