
Cypress Semiconductor
General Description
The Cypress S70GL02GT 2-Gigabit MirrorBit® Flash memory device is fabricated on 45-nm MirrorBit® Eclipse™ process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.
Distinctive Characteristics
◾ CMOS 3.0 Volt Core with Versatile I/O™
◾ Two 1024 Megabit (S29GL01GT) in a single 64-ball Fortified
BGA package (see S29GL01GT datasheet for full
specifications)
◾ 45 nm MirrorBit Eclipse process technology
◾ Single supply (VCC) for read / program / erase (2.7V to 3.6V)
◾ Versatile I/O Feature
– Wide I/O voltage (VIO): 1.65V to VCC
◾ x8 and x16 data bus
◾ 16-word/32-byte page read buffer
◾ 512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of
512 bytes
◾ Sector Erase
– Uniform 128-kbytes sectors
– S70GL02GT: two thousand forty-eight sectors
◾ Suspend and Resume commands for Program and Erase
operations
◾ Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
◾ Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each
sector
◾ Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Available in each device Support for CFI (Common Flash
Interface)
◾ WP# input
– Protects the last sector of the device, regardless of sector
protection settings
◾ Temperature Range / Grade
– Industrial (–40°C to +85°C)
– Industrial Plus (–40°C to +105°C)
– Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
◾ 100,000 Program-Erase cycles
◾ 20-year data retention
◾ Packaging Options
– 64-ball LSH Fortified BGA, 13 mm x 11 mm