RTAN430C Hoja de datos - Isahaya Electronics
Fabricante

Isahaya Electronics
FEATURE
◾ Built-in bias resistor (R1=4.7kΩ)
◾ Small package for easy mounting.
◾ High reverse hFE
◾ Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA)
◾ Low on Resistance
Ron=0.80Ω(TYP.)(@VI=5V)
APPLICATION
muting circuit , switching circuit
Número de pieza
componentes Descripción
Ver
Fabricante
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon Npn Epitaxial Type
Isahaya Electronics
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
Isahaya Electronics