Número de pieza
RS3E075AT
componentes Descripción
Other PDF
no available.
PDF
page
4 Pages
File Size
1 MB
Fabricante
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
RS3E075AT Hoja de datos - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs：
1) VDS=-30V,ID=-8A,RDS(ON)<20mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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