Número de pieza
RN1241
componentes Descripción
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Toshiba
RN1241 Hoja de datos - Toshiba
Toshiba
For Muting and Switching Applications
1. High emitter-base voltage : VEBO= 25v (min)
2. High reverse hfe : reverse hFE = 150 (typ.) (VCE= −2V, IC= −4ma)
3. Low on resistance : RON= 1Ω(typ.) (IB= 5mA)
4. With built-in bias resistors
5. Simplify circuit design
6. Reduce a quantity of parts and manufacturing process
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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Toshiba
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