Description
The RMPA2053-103 is a power amplifier module (PAM) for 3GPP Wideband CDMA (WCDMA) applications. The PAM has been specifically designed for low current draw at low power levels while maintaining high power efficiency.The PAM is internally matched to 50 ohms to minimize the use of external components. High power-added efficiency and excellent linearity are achieved using Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) process.

FEATUREs
◆ Low backed-off power current consumption: 80 mA Itotal at 12 dBm power output
◆ Single polarity supply operation and power-down mode
◆ 30% power-added efficiency at +27.5 dBm typical WCDMA output power
◆ Compact LCC package: 6.0 x 8.0 x 1.5 mm3
◆ 50 ohm matched and DC blocked input/output
◆ DC Power Management