Número de pieza
RJK6012DPE-00-J3
componentes Descripción
Other PDF
PDF
page
7 Pages
File Size
71.3 kB
Fabricante
Renesas Electronics
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RJK6012DPE-00-J3 Hoja de datos - Renesas Electronics
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Features
• Low on-resistance
RDS(on) = 0.77 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
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componentes Descripción
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Fabricante
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
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