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RF2311 Hoja de datos - RF Micro Devices

RF2311 image

Número de pieza
RF2311

componentes Descripción

Other PDF
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page
6 Pages

File Size
60 kB

Fabricante
RFMD
RF Micro Devices 

Product Description
The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz.


FEATUREs
• DC to well over 1600MHz Operation
• Internally Matched Input and Output
• 14dB Small Signal Gain
• 4.2dB Noise Figure
• +9dBm Output Power
• Single 2.7V to 6V Positive Power Supply

Typical Applications
• General Purpose High Bandwidth Gain Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers

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