
RF Micro Devices
Product Description
The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.
FEATUREs
• DC to 3000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• 4dB Noise Figure
• 25mW Linear Output Power
• Single Positive Power Supply
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment