Número de pieza
RF2125P
componentes Descripción
Other PDF
no available.
PDF
page
6 Pages
File Size
49.5 kB
Fabricante

RF Micro Devices
Product Description
The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz.
FEATUREs
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment