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Q67007-A9553 Hoja de datos - Infineon Technologies

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Número de pieza
Q67007-A9553

componentes Descripción

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16 Pages

File Size
265.4 kB

Fabricante
Infineon
Infineon Technologies 

Description
The BTS 7751 G is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames. The sources are connected to individual pins, so the BTS 7751 G can be used in H-bridge- as well as in any other configuration. Both the double high-side and the two low-side switches of the BTS 7751 G are manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuitry. The high-side switch is fully protected and contains the control and diagnosis circuitry. Also the low-side switches are fully protected, the equivalent standard product is the BSP 78.
In contrast to the BTS 7750 G, the BTS 7751 G offers an open load in Off-mode detection and slightly increased current limitation.


FEATUREs
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low RDS ON: 70 mΩ high-side switch, 45 mΩ low
   side switch (typical values @ 25 °C)
• Maximum peak current: typ. 14 A @ 25 °C
• Very low quiescent current: typ. 5 µA @ 25 °C
• Small outline, enhanced power P-DSO-package
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Open load detection in Off-mode
• Under-voltage detection with hysteresis
• PWM frequencies up to 1 kHz

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Fabricante
TrilithIC
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Infineon Technologies
TrilithIC
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Siemens AG
TrilithIC
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Infineon Technologies
TrilithIC
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Infineon Technologies

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