DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

APPLICATIONS
    Common-base, class B power amplifiers up to 4.2 GHz.