Description
The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 55 Watts, 1.9–2.0 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 55 Watts
• Gold Metallization
• Silicon Nitride Passivated