Description
The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 6 Watts, 1.465–1.513 GHz
• Class AB Characteristics
• 35% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated