datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Nexperia B.V. All rights reserved  >>> PSMN015-100B PDF

PSMN015-100B Hoja de datos - Nexperia B.V. All rights reserved

PSMN015-100B image

Número de pieza
PSMN015-100B

Other PDF
  no available.

PDF
DOWNLOAD     

page
12 Pages

File Size
646 kB

Fabricante
NEXPERIA
Nexperia B.V. All rights reserved 

General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Rated for avalanche ruggedness


APPLICATIONs
■ DC-to-DC convertors 
■ Switched-mode power supplies


Número de pieza
componentes Descripción
Ver
Fabricante
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
PDF
NXP Semiconductors.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]