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PMXB360ENEA Hoja de datos - NXP Semiconductors.

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PMXB360ENEA

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page
15 Pages

File Size
207.4 kB

Fabricante
NXP
NXP Semiconductors. 

General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


FEATUREs and benefits
• Logic-level compatible
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Tin-plated 100 % solderable side pads for optical solder inspection
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• AEC-Q101 qualified


APPLICATIONs
• Relay driver
• Power management in automotive and industrial applications
• LED driver
• DC-to-DC converter

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