Número de pieza
PHPT61002PYC
componentes Descripción
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15 Pages
File Size
655 kB
Fabricante
Nexperia B.V. All rights reserved
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PHPT61002PYC Hoja de datos - Nexperia B.V. All rights reserved
Nexperia B.V. All rights reserved
General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61002NYC.
FEATUREs and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
APPLICATIONs
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
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