GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.

QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VDS Drain-source voltage 400 V
ID Drain current (DC) 10.7 A
Ptot Total power dissipation 147 W
RDS(ON) Drain-source on-state resistance 0.55 Ω