PHD13003C,126 Hoja de datos - NXP Semiconductors.
Número de pieza
PHD13003C,126
Fabricante

NXP Semiconductors.
General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package
FEATUREs and benefits
■ Fast switching
■ High typical DC current gain
■ High voltage capability
■ Integrated anti-parallel E-C diode
APPLICATIONs
■ Compact fluorescent lamps (CFL)
■ Low power electronic lighting ballasts
■ Off-line self-oscillating power supplies (SOPS) for battery charging
Número de pieza
componentes Descripción
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Fabricante
NPN power transistor with integrated diode
WeEn Semiconductors
NPN power transistor with integrated diode
NXP Semiconductors.
NPN power transistor with integrated diode
WeEn Semiconductors
NPN power transistor with integrated diode ( Rev : 2009 )
NXP Semiconductors.
NPN power transistor with integrated diode
NXP Semiconductors.
NPN power transistor with integrated diode
WeEn Semiconductors
NPN power transistor with integrated diode
WeEn Semiconductors
NPN power transistor with integrated diode ( Rev : 2009 )
NXP Semiconductors.
NPN power transistor with integrated diode
WeEn Semiconductors
NPN power transistor with integrated diode
NXP Semiconductors.