Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Número de pieza
componentes Descripción
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Fabricante
Radar Pulsed Power Transistor, 11W, lps Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
Tyco Electronics
Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 9W, 300μs Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.