Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Número de pieza
componentes Descripción
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Fabricante
Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty 2.7 - 3.1 GHz
Tyco Electronics
Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty 3.1 - 3.5 GHz
Tyco Electronics
Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty 2.7 - 3.1 GHz
Tyco Electronics
Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty 2.7 - 3.1 GHz
Tyco Electronics
Radar Pulsed Power Transistor 75 W, 2.7 - 3.1 GHz, 300 µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 9W, 300μs Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics