General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4220V.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ DC-to-DC conversion
■ MOSFET gate driving
■ Motor control
■ Charging circuits
■ Low power switches (e.g. motors, fans)
■ Portable applications