General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160K.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ High voltage DC-to-DC conversion
■ High voltage MOSFET gate driving
■ High voltage motor control
■ High voltage power switches (e.g. motors, fans)
■ Automotive applications