Número de pieza
PBHV9115T,215
componentes Descripción
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PDF
page
13 Pages
File Size
217.1 kB
Fabricante
NXP Semiconductors.
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PBHV9115T,215 Hoja de datos - NXP Semiconductors.
NXP Semiconductors.
General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115T.
FEATUREs
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
APPLICATIONs
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch mode power supply
Número de pieza
componentes Descripción
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Fabricante
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150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
Nexperia B.V. All rights reserved
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
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150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor
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