PBHV8215Z Hoja de datos - NXP Semiconductors.
Fabricante

NXP Semiconductors.
General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9215Z.
FEATUREs
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
■ Medium power SMD plastic package
APPLICATIONs
■ LED driver for LED chain module
■ LCD backlighting
■ Automotive motor management
■ Switch Mode Power Supply (SMPS)
Número de pieza
componentes Descripción
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Nexperia B.V. All rights reserved
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