NX7529BB-AA Hoja de datos - California Eastern Laboratories.
Número de pieza
NX7529BB-AA
Fabricante

California Eastern Laboratories.
DESCRIPTION
NECs NX7529BB-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate under pulsed conditions and is designed for a light source of Optical Time Domain Reflectometer(OTDR).
FEATURES
• HIGH OUTPUT POWER:
Pf = 40 mW at IFP = 400 mA,
Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%.
• LONG WAVELENGTH:
λC = 1550 nm
Número de pieza
componentes Descripción
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Fabricante
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (60 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (120 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (70 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (25 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
California Eastern Laboratories.
NEC's 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
California Eastern Laboratories.