Power MOSFET
30 V, 191 A, Single N−Channel, SO−8FL

FEATUREs
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices

APPLICATIONs
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching