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NTHD4N02FT1 Hoja de datos - ON Semiconductor

NTHD4N02F image

Número de pieza
NTHD4N02FT1

componentes Descripción

Other PDF
  2004  

PDF
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page
8 Pages

File Size
141.4 kB

Fabricante
ONSEMI
ON Semiconductor 

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET


FEATUREs
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available


APPLICATIONs
• Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
   Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,
   and Media Players
• Load Side Switching


Número de pieza
componentes Descripción
Ver
Fabricante
Power MOSFET and Schottky Diode
PDF
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode ( Rev : 2007 )
PDF
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2004 )
PDF
ON Semiconductor
Power MOSFET and Schottky Diode
PDF
ON Semiconductor
Power MOSFET and Schottky Diode ( Rev : 2016 )
PDF
ON Semiconductor
Power MOSFET and Schottky Diode
PDF
Will Semiconductor Ltd.
Power MOSFET and Schottky Diode
PDF
ON Semiconductor
Power MOSFET and Schottky Diode
PDF
ON Semiconductor
Power MOSFET and Schottky Diode
PDF
ON Semiconductor
Power MOSFET and Schottky Diode
PDF
ON Semiconductor

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