Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.

FEATUREs:
● Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
● Guarding for Stress Protection
● Low Forward Voltage
● +150°C Operating Junction Temperature
● Guaranteed Reverse Avalanche