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NTE357 Hoja de datos - NTE Electronics

Número de pieza

NTE357

componentes Descripción

Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

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NTE Electronics

Description:
The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range.

FEATUREs:
● Specified 28V, 175MHz Characteristics −
    Output Power = 7.0 Watts
    Minimum Gain = 8.4dB
    Efficiency = 60%
● Characterized from 125 to 175MHz
● Includes Series Equivalent Impedances

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