NTE2380 Hoja de datos - NTE Electronics
Fabricante

NTE Electronics
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.
FEATUREs:
• Silicon Gate for Fast Switching Speeds
• Rugged – SOA is Power Dissipation Limited
• Source–to–Drain Diode Characterized for Use With Inductive Loads
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon Complementary Transistors High Current, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
N–Channel, Enhancement Mode High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics
Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
NTE Electronics