DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
   RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
   RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A)
   RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
• Low input capacitance
   Ciss = 1300 pF TYP.
• Built-in gate protection diode