NJD2873 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA)
• DC Current Gain -hFE = 120(Min)@ IC= 0.5A
• High Current-Gain—Bandwidth Product
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high-gain audio amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
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Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
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Silicon NPN Power Transistor
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New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor