This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

FEATUREs
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 μs Short Circuit Capability
• This is a Pb−Free Device

Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies (UPS)
• Welding