Número de pieza
NESG210719
componentes Descripción
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10 Pages
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Renesas Electronics
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NESG210719 Hoja de datos - Renesas Electronics
Renesas Electronics
FEATURES
• The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr.
• 3-pin ultra super minimold (19, 1608 PKG)
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componentes Descripción
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Fabricante
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
California Eastern Laboratories.
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Laboratories.
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
Renesas Electronics
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
California Eastern Laboratories.
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
California Eastern Laboratories.
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Renesas Electronics
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
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